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#	Item
31	Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:32:21 Transistors Annealing Silicon monoxide High-k dielectric Layer Silicon dioxide Silicide Photoemission spectroscopy Chemistry Semiconductor device fabrication Silicon compounds
32	Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Effects of thermal annealing on charge density and N chemical states in HfSiON films studied by photoemission spectroscopy Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:36:05 Technology Electronic engineering High-k dielectric Transistors Oxide Chemical vapor deposition Vacuum Photoemission spectroscopy Chemistry Semiconductor device fabrication Physics
33	Photon Factory Activity Report 2004 #22 Part BSurface and Interface 2C/2002S2-002 Crystallization in HfO2 gate insulators with in situ annealing Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:31:27 Physics Environmental chemistry Materials science Spectroscopy X-ray absorption spectroscopy High-k dielectric XANES Science Chemistry Condensed matter physics
34	Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Relationship between band alignment and chemical states upon annealing in Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-12-27 22:22:07 Atomic layer deposition Semiconductor Hafnium(IV) silicate Chemistry Electromagnetism Physics Electronic engineering High-k dielectric Transistors
35	Photon Factory Activity Report 2007 #25 Part BElectronic Structure of Condensed Matter 2C/2005S2-002 Depth profiling of chemical states and charge density in HfSiON by Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:34:55 Emission spectroscopy Photoemission spectroscopy Materials science High-k dielectric Electron Spectroscopy Dielectric Core electron Physics Chemistry Atomic physics
36	Photon Factory Activity Report 2004 #22 Part BSurface and Interface 2C/2002S2-002 Interfacial reaction of polycrystalline-Si /HfO2/Si gate stacks with annealing Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:31:28 Silicide Polycrystalline silicon Photoemission spectroscopy High-k dielectric Physics Sputtering Annealing Chemistry Materials science Anions
37	Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002 Hf-silicidation reactions due to vacuum annealing for a-Si/ HfSiO(N)/ Si gate Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:34:50 Nitrides Superhard materials Materials science Thin film deposition High-k dielectric Transistors Silicide Titanium nitride Atomic layer deposition Chemistry Semiconductor device fabrication Matter
38	© IMEC FEOL ETCH CHALLENGES, FROM PLANAR METAL GATES TOWARDS Add to Reading List Source URL: www.leti.fr Language: English - Date: 2012-05-24 09:07:30 Microtechnology Extreme ultraviolet lithography Transistors Etching Multigate device IMEC Graphene High-k dielectric Polycrystalline silicon Materials science Technology Physics
39	Tecate Group SURFACE MOUNT MULTILAYER CERAMIC HIGH VOLTAGE TYPE CMC (HV) Add to Reading List Source URL: www.tecategroup.com Language: English - Date: 2012-10-09 18:21:40 Technology Capacitance Force Capacitors Physics EIA Class 2 dielectric
40	IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 2, FEBRUARYModel Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices Add to Reading List Source URL: yangtze.hku.hk Language: English - Date: 2015-04-21 18:39:08 Spintronics Nanoelectronics Nanowire Heterojunction MOSFET Effective mass High-k dielectric Semiconductor Electron Physics Condensed matter physics Electronics

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